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| FDS7082N3 February 2004 FDS7082N3 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for both high and low side switch applications in Point of Load converters. Features * 17.5 A, 30 V RDS(ON) = 6 m @ VGS = 10 V RDS(ON) = 8 m @ VGS = 4.5 V * High performance trench technology for extremely low RDS(ON) * Low Qg and Rg for fast switching * FLMP SO-8 package for enhanced thermal performance in an industry-standard package outline. Applications * Secondary side Synchronous rectifier * Synchronous Buck VRM and POL Converters 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 20 (Note 1a) Units V V A W C 17.5 60 3.0 1.5 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 40 0.5 C/W C/W Package Marking and Ordering Information Device Marking FDS7082N3 Device FDS7082N3 Reel Size 13'' Tape width 12mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDS7082N3 Rev D1 (W) FDS7082N3 Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 17.5 A VGS = 4.5 V, ID = 15.5 A VGS = 10 V, ID = 17.5 A,TJ = 125C VDS = 10 V, ID = 17.5 A Min 30 Typ Max Units V Off Characteristics 24 10 100 1 2 -4.3 4.9 6.5 5.0 116 6.0 8.0 8.0 3 mV/C A nA On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance V mV/C m gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qg Qgs Qgd IS VSD trr Qrr S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz 2271 554 213 1.4 pF pF pF 20 37 64 32 53 31 ns ns ns ns nC nC nC nC Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 14 12 38 18 VDS = 15 V, ID = 17.5 A, VGS =10 V VDS = 15 V, ID = 17.5 A, VGS = 5 V 43 22 6.8 6.9 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.5 A Voltage IF = 17.5 A, Diode Reverse Recovery Time diF/dt = 100 A/s Diode Reverse Recovery Charge 2.5 (Note 2) A V nS nC 0.7 31 21 1.2 FDS7082N3 Rev D1 (W) FDS7082N3 Electrical Characteristics Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 40C/W when mounted on a 1in2 pad of 2 oz copper b) 85C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS7082N3 Rev D1 (W) FDS7082N3 Typical Characteristics 60 3 VGS = 10V 4.5V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 1.5 VGS = 3.5V ID, DRAIN CURRENT (A) 6.0V 40 3.5V 20 4.0V 4.5V 5.0V 6.0V 10V 0 10 20 30 40 ID, DRAIN CURRENT (A) 50 60 0 0 0.5 1 VDS, DRAIN-SOURCE VOLTAGE (V) 3.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.022 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 17.5A VGS = 10V ID = 8.75A 1.4 0.018 1.2 0.014 TA = 125oC 1 0.01 TA = 25oC 0.8 0.006 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0.002 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation withTemperature. 60 VDS = 5V IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 TA =125oC 25oC -55oC 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7082N3 Rev D1 (W) FDS7082N3 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 17.5A 8 3000 2500 CAPACITANCE (pF) VDS = 5V 10V 2000 1500 1000 500 f = 1MHz VGS = 0 V Ciss 6 15V 4 Coss 2 Crss 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 RDS(ON) LIMIT ID, D R A IN C U R R E N T (A ) 100 1ms 10ms 100ms 1s VGS = 10V SINGLE PULSE RJA = 85 C/W TA = 25 C o o 100s 40 SINGLE PULSE RJA = 85C/W TA = 25C 10 10s DC 30 1 20 0.1 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.01 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1.00 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.10 0.1 0.05 0.02 RJA(t) = r(t) * RJA RJA = 85 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.01 SINGLE PULSE 0.00 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDS7082N3 Rev D1 (W) FDS7082N3 Dimensional Outline and Pad Layout FDS7082N3 Rev D1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I8 |
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